X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition

摘要

By employing pulsed-laser deposition, thin-film GaAs on glass has been deposited. X-ray analysis showed that the material has a polycrystalline texture with a crystal size of 58 nm. The absorption of the film has been measured by standard constant photocurrent measurements and the photocurrent itself with the lock-in technique. Absorption and photocurrent have been straightforwardly modelled with the crystalline density of state function and Urbach's tail. The work reveals the capability of pulsed-laser deposition to form high-quality GaAs films on glass for optical applications.