Phonon spectroscopy of carrier heating effects in δ-doped GaAs:Si

摘要

At temperatures between 2 and 10 K the phonon induced conductivity of δ-doped GaAs:Si was investigated as a function of carrier heating. Two peculiarities were observed at about 1 and 10 V cm~(-1). The analysis allows us to conclude that they are connected with destruction of weak localization and redistribution of hot carriers between states with different mobilities, respectively.