Hot electron spectroscopy of the GaAs/AlAs/GaAs band structure

摘要

Hot electron spectroscopy was used to study transport through two GaAs/AlAs/GaAs heterostructures with undoped AlAs layers of 10 and 13 nm width. We observed transport through the individual bound states of the quantum well formed in the X-valley of the GaAs/AlAs/GaAs system. From the energetic positions of these bound states, we derived X_(AlAs) ― Γ_(GaAs) = 136 meV for both samples and m_(X, AlAs)~* = (0.8 +- 0.1)m_0 for the 10 nm sample and m_(X, AlAs)~* = (0.7 +- 0.1 )m_0 for the 13 nm sample.