Spin splitting of subband energies due to inversion asymmetry in semiconductor heterostructures

摘要

We review the spin splitting of subband energies caused by bulk and structure inversion asymmetries in semiconductor Ⅲ-Ⅴ and Ⅱ-Ⅵ heterostructures. We present both theoretical and experimental aspects of the problem, and we discuss the spin splitting in the absence of external fields as well as its dependence on magnetic and electric fields. The theoretical description of conduction and valence subbands is based on a multiband k · p formalism. Experimental results are summarized, as obtained by beatings of the Shubnikov-de Haas oscillations, magnetoconductance in antilocalization regime, Raman scattering, spin resonance and cyclotron resonance. This review article is motivated by recent interest in spin properties of heterostructures in view of spintronic applications.