Effect of In additive on the electrical properties of Se-Te alloy

摘要

Electrical measurements are done on Se85-xTe15Inx (x = 0, 2, 4, 6 and 10 at%) thin films. The dark conductivity (sigma(d)) increases and the activation energy (DeltaEd) decreases as the In concentration increases. The photoconductivity (sigma(ph)) also increases with the increase in In concentration. The photosensitivity (sigma(ph)/sigma(d)) decreases sharply after the In incorporation. The charge carrier concentration (n(sigma)) is calculated with the help of dc conductivity measurements. The value of n(sigma) increases as the In concentration increases. The results are explained on the basis of an increase in the density of localized states present in the mobility gap.