首页> 外文期刊>Semiconductor science and technology >Exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff
【24h】

Exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff

机译:使用外延剥离制造的ZnSe基微腔中的激子-光子耦合

获取原文
获取原文并翻译 | 示例
       

摘要

We report the observation of strong exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff. Molecular beam epitaxial grown ZnSe/Zn_(0.9)Cd_(0.1)Se quantum wells with a one wavelength optical length at the exciton emission were transferred to a SiO_2/Ta_2O_5 mirror with a reflectance of 96% to form finesse matched microcavities. Analysis of our angle-resolved transmission spectra reveals key features of the strong coupling regime: anticrossing with a normal mode splitting of 23.6 meV at 20 K, composite evolution of the lower and upper polaritons and narrowing of the lower polariton linewidth near resonance. The heavy-hole exciton oscillator strength per quantum well is also deduced to be 1.78 × 10~(13) cm~(-2).
机译:我们报告了使用外延剥离制造的基于ZnSe的微腔中强激子-光子耦合的观察结果。分子束外延生长的ZnSe / Zn_(0.9)Cd_(0.1)Se量子阱在激子发射时具有一个波长的光学长度,被转移到SiO_2 / Ta_2O_5反射镜上,反射率为96%,形成精细匹配的微腔。对我们的角度分辨透射光谱的分析揭示了强耦合机制的关键特征:在20 K时具有23.6 meV的正常模式分裂的反交叉,上下极化子的复合演化以及共振附近的极化子线宽变窄。每个量子阱的重空穴激子振荡器强度也推导出为1.78×10〜(13)cm〜(-2)。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号