首页> 外文期刊>Semiconductor science and technology >Suppression of spin-splitting in Al_(0.33)Ga_(0.67)As/Al_yGa_(1-y) As heterostructures with y varying from 0.10 to 0.15
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Suppression of spin-splitting in Al_(0.33)Ga_(0.67)As/Al_yGa_(1-y) As heterostructures with y varying from 0.10 to 0.15

机译:抑制Al_(0.33)Ga_(0.67)As / Al_yGa_(1-y)As异质结构自旋分裂,y在0.10至0.15之间变化

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摘要

The Al_(0.33)Ga_(0.67)As/Al_yGa_(1-y) As heterostructure can be used to create a two-dimensional electron gas with Lande g-factor g ≈ 0 for y in the region 0.10 to 0.15. A spin-splitting can be observed in the longitudinal magnetoresistance (p_(xx)) with a high magnetic field (23 T) applied at angles close to the plane of the two-dimensional electron gas. The precise behaviour of p_(xx) with increasing in-plane field depends on the composition of the conducting layer. The appearance of spin-splitting in p_(xx) does not necessarily invalidate the g ≈ 0 condition. We discuss this result in the context of the competing role played by disorder, g-factor enhancement due to exchange interaction and the recently observed Stoner transition in a two-dimensional electron gas. The effect of wavefunction extent at the heterointerface is also considered. The Al_yGa_(1-y)As material system may have applications in the disentanglement of spin states in quantum information processing when incorporated into double well systems for use in more accessible magnetic field ranges.
机译:Al_(0.33)Ga_(0.67)As / Al_yGa_(1-y)As异质结构可用于在0.10至0.15范围内为y创建具有Lande g因子g≈0的二维电子气。可以在以接近二维电子气平面的角度施加高磁场(23 T)的纵向磁阻(p_(xx))中观察到自旋分裂。 p_(xx)随平面内场增加的精确行为取决于导电层的成分。 p_(xx)中自旋分裂的出现并不一定会使g≈0条件无效。我们在无序竞争作用,由于交换相互作用引起的g因子增强和二维电子气中最近观察到的斯托纳跃迁的竞争作用中讨论了这一结果。还考虑了波函数范围在异质界面上的影响。当将Al_yGa_(1-y)As材料系统并入到双阱系统中以用于更易接近的磁场范围时,其可以在量子信息处理中的自旋态的解缠中应用。

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