机译:抑制Al_(0.33)Ga_(0.67)As / Al_yGa_(1-y)As异质结构自旋分裂,y在0.10至0.15之间变化
Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 OHE, UK;
机译:抑制Al_(0.33)Ga_(0.67)As / Al_yGa_(1-y)As异质结构中y自0.10到0.15的自旋分裂
机译:Al_xGa_(1-x)As / Al_(0.3)Ga_(0.7)As / Al_yGa_(1-y)As / Al_(0.3)Ga_(0.7)As多壳量子点的电子和子带光学性质的详细研究
机译:调制掺杂的Ga_(1-y)Al_(y)As / Ga_(1-x)Mn_(x)As / Ga_(1-y)Al_(y)中Mn间隙的费米能量依赖性形成的直接证据作为异质结构
机译:AL_(0.33)GA_(0.67)AS / IN_XGA_(1-x)AS_(1-Y)N_Y MULTIQUANTUM孔中的构图依赖于谐振拉曼散射
机译:镧锶锰(LA0.67SR0.33MNO3)和锆钛酸铅(PBZR0.52TI0.48O3)薄膜异质结构中的自极化感应磁电耦合
机译:InP / In_ {0.53} Ga_ {0.47} As界面对In_ {0.52} Al_ {0.48} As / In_ {0.53} Ga_ {0.47} As异质结构中自旋轨道相互作用的影响