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Study on combined channel parameters of a static induction transistor

机译:静态感应晶体管的组合沟道参数研究

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The electric performance of a static induction transistor (SIT) depends strongly on the channel parameters of the device. In the present paper, the ratio l_c/d_c is researched, which is an essential combined channel parameter not only for Ⅰ-Ⅴ characteristics but also for the high-current performance of a high-frequency SIT (HF SIT). The other key combined channel parameter, pinch factor β, is also discussed which embodies the general control criterion of fabrication parameters in determining whether it is a mixed, triode-like or pentode-like Ⅰ-Ⅴ characteristic. The design guidelines which are available and convenient for design and fabrication of an HF SIT are provided, particularly for the mixed Ⅰ-Ⅴ characteristics.
机译:静态感应晶体管(SIT)的电气性能在很大程度上取决于器件的通道参数。本文研究了比率l_c / d_c,它不仅对于Ⅰ-Ⅴ特性,而且对于高频SIT(HF SIT)的高电流性能而言,都是必不可少的组合通道参数。还讨论了另一个关键的组合通道参数,收缩因子β,它体现了制造参数确定其混合特性(如三极管或五极管的Ⅰ-Ⅴ特性)的一般控制标准。提供了可用于HF SIT设计和制造的便捷设计指南,特别是针对Ⅰ-Ⅴ混合特性。

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