Determination of the surface segregation ratio of P in Si(1 0 0) during solid-source molecular beam epitaxial growth

摘要

The surface segregation ratio as a function of growth temperature of a dopant is a fundamental property that must be known for that dopant to be used in device applications. Using low energy secondary ion mass spectrometry, a precise determination of the segregation ratio of P in Si(1 0 0) in the temperature interval from 380℃ to 650℃ has been made. The values of the surface segregation ratios determined are substantially less than previously reported. It has been observed that the source of the P dopant as well as the temperature during growth influences the segregation of P. Using a GaP decomposition source, the deposited P has been shown to be fully electrically active in the whole growth temperature interval by measurement of the carrier concentration profiles using spreading resistance profiling.