机译:栅电极功函数设计的凹陷沟道纳米级MOSFET的二维阈值电压模型和设计考虑因素:I
Semiconductor Devices Research Laboratory, Department of Electronic Science, University of Delhi,South Campus, Benito Juarez road, Dhaula Kuan, New Delhi, India;
Semiconductor Devices Research Laboratory, Department of Electronic Science, University of Delhi,South Campus, Benito Juarez road, Dhaula Kuan, New Delhi, India;
Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, Karampura,New Delhi, India;
Semiconductor Devices Research Laboratory, Department of Electronic Science, University of Delhi,South Campus, Benito Juarez road, Dhaula Kuan, New Delhi, India;
Semiconductor Devices Research Laboratory, Department of Electronic Science, University of Delhi,South Campus, Benito Juarez road, Dhaula Kuan, New Delhi, India;
机译:工作功能的二维电位和阈值电压建模工程双栅极高k门堆栈肖特基障屏马架
机译:多层栅电极功函数工程凹陷沟道(MLGEWE-RC)50 nm以下MOSFET的研究:一种新颖的设计
机译:多层栅极电介质凹槽沟道(MLaG-RC)纳米MOSFET的二维分析亚阈值模型
机译:纳米级多层栅电极工作功能的紧凑分析阈值电压模型工程嵌入式通道(MLGEWE-RC)MOSFET
机译:具有低接触电阻和改进的栅极控制的晶片尺度制造和表征凹槽PTSE2 MOSFET
机译:淀粉样蛋白β调节弓形神经肽Y神经元的低阈值激活电压门控L型钙通道导致钙失调和下丘脑功能障碍。
机译:栅极凹陷纳米型SOI MOSFET中电气特性和串联电阻的频道厚度影响
机译:多晶硅栅极对具有薄栅氧化层的亚100nm mOsFET中随机掺杂诱导阈值电压波动的影响