Charge carrier lifetime degradation in Cz silicon through the formation of a boron-rich layer during BBr_3 diffusion processes

摘要

Boron diffusion is commonly associated with the formation of an undesirable boron-rich layer (BRL), which is often made responsible for degradation of the carrier lifetime in the bulk. We investigate the phenomenology of the BRL formation, which results from BBr_3 boron diffusion processes, and its impact on sheet resistance and bulk lifetime. Our measurements show that boron silicate glass (BSG) and BRL thicknesses vary between 50 and 600 nm and 0 and 80 nm respectively within the two-dimensional wafer surface of one sample for one diffusion process. Both thicknesses strongly depend on the gas composition during composition and deposition time. Further results show that BRL formation is favored by high concentrations of BBr_3 vapor and of oxygen during B_2O_3 deposition. Also, high drive-in temperatures promote the growth of the BRL. We find that a BRL of more than 10 nm thickness causes a degradation of the carrier lifetime in the bulk of the silicon wafer. In particular, we show that this bulk lifetime degradation occurs during the cool-down ramp after the diffusion process. We show that carrier lifetime degradation can be avoided either by limiting the process temperature to 850 ℃ and thus preventing BRL formation or through reconverting the BRL by a drive-in step in oxidizing atmosphere at 920 ℃.