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首页> 外文期刊>Semiconductor science and technology >Spontaneous formation of {1101} InGaN quantum wells on a (1122) GaN template and their electroluminescence characteristics
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Spontaneous formation of {1101} InGaN quantum wells on a (1122) GaN template and their electroluminescence characteristics

机译：{1101} InGaN量子阱在（1122）GaN模板上的自发形成及其电致发光特性

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摘要

Discrete dies of the light-emitting diode (LED) fabricated on a (1122)-oriented GaN template exhibited electroluminescence peaked at 467 nm and optical output power was greater than 200 μW at 20 mA. The LED was found to have quantum well structure grown on spontaneously formed {1101} facets, confirmed via transmission electron microscopy. Polarization switching was observed in luminescence perpendicular to the device surface: the dominant polarization was parallel to [1123]. The device structure was shown to be advantageous tor photovoltaic cell applications by evaluating photo-induced current, although piezoelectric effects on photocurrent were not explicitly determined. The filling rate of band-edge states was estimated to be 0.025 eV pec decade of current via low-temperature electroluminescence measurements.
机译：在（1122）取向的GaN模板上制造的发光二极管（LED）的离散芯片在467 nm处出现电致发光峰，并且在20 mA时光输出功率大于200μW。发现LED具有在自发形成的{1101}小面上生长的量子阱结构，这通过透射电子显微镜证实。在垂直于器件表面的发光中观察到偏振转换：主要偏振平行于[1123]。尽管未明确确定对光电流的压电效应，但通过评估光感应电流，该器件结构对光伏电池应用具有优势。通过低温电致发光测量，带边缘态的填充速率估计为0.025 eV pec十倍电流。

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  • 来源
    《Semiconductor science and technology》 |2010年第1期|4.1-4.8|共8页
  • 作者

    Hisashi Masui; Derrick S Kamber; Stuart E Brinkley; Feng Wu; Troy J Baker; Hong Zhong; Michael Iza; James S Speck; Shuji Nakamura; Steven P DenBaars;

  • 作者单位

    Materials Department, Solid State Lighting and Energy Center, Materials Department College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93 106-5055, USA;

    Materials Department, Solid State Lighting and Energy Center, Materials Department College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93 106-5055, USA;

    Materials Department, Solid State Lighting and Energy Center, Materials Department College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93 106-5055, USA;

    Materials Department, Solid State Lighting and Energy Center, Materials Department College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93 106-5055, USA;

    Materials Department, Solid State Lighting and Energy Center, Materials Department College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93 106-5055, USA;

    Materials Department, Solid State Lighting and Energy Center, Materials Department College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93 106-5055, USA;

    Materials Department, Solid State Lighting and Energy Center, Materials Department College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93 106-5055, USA;

    Materials Department, Solid State Lighting and Energy Center, Materials Department College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93 106-5055, USA;

    Materials Department, Solid State Lighting and Energy Center, Materials Department College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93 106-5055, USA;

    Materials Department, Solid State Lighting and Energy Center, Materials Department College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93 106-5055, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 01:31:38

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