Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation

摘要

Defects in as-grown undoped and tellurium-doped gallium antimonide were studied using positron lifetime and coincidence Doppler broadening measurements. The grown-in defects in these samples were supposed to be Ga vacancy (V_(Ga))-related defects. More V_(Ga)-related defects were introduced into undoped and lightly Te-doped GaSb after electron irradiation at the doses of 1.0 x 10~(17) cm~(-2)and 1.0 x 10~(18)cm~(-2); however, in the heavily Te-doped GaSb, electron irradiation led to partial recovery of V~( Ga). The role of Te content in the defect evolution is also discussed.