Point contact to single-crystalline diamond

摘要

Using point-contact configuration, the ohmic and nonlinear space-charge-limited electronic transport in semi-insulating single-crystalline diamond was studied. Analysis of I-V curves enabled us to determine the bulk resistivity and concentration of electrically active traps, i.e. parameters crucial for potential applications of this material. It has been further shown that the charge carrier injection into the bulk diamond is strongly influenced by the surface treatment in oxygen plasma changing its surface conductivity. The observed behaviour has been accounted for within the frame of semi-quantitative simple model.