机译:热退火后非晶In-Ga-Zn-O薄膜晶体管沟道层的成分变化
Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea;
Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea;
LG Display Co., Ltd, Wollong-myeon, Paju-si, Gyeonggi-do 413-811, Korea;
LG Display Co., Ltd, Wollong-myeon, Paju-si, Gyeonggi-do 413-811, Korea;
LG Display Co., Ltd, Wollong-myeon, Paju-si, Gyeonggi-do 413-811, Korea;
LG Display Co., Ltd, Wollong-myeon, Paju-si, Gyeonggi-do 413-811, Korea;
School of Nano and Advanced Materials Engineering, Ghangwon National University, Changwon, Gyeongnam 641-773, Korea;
Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea,whom correspondence should be addressed;
机译:通过真空快速热退火,具有高导电In-Zn-O掩埋层的通道工程的Al-Zn-SN-O薄膜晶体管的性能增强
机译:用原子层沉积制备的GA-ZN-O通道对薄膜晶体管的偏压稳定性的阳离子组成效应
机译:后沟道蚀刻型无定形IN-GA-ZN-O薄膜晶体管应力稳定性的提高
机译:偏压溅射沉积沟道层的非晶In-Ga-Zn-O薄膜晶体管的特性
机译:非晶态镍铌合金的热退火行为(金属,薄膜反应,结构松弛,稳定性,覆盖层)。
机译:高密度Ni纳米粒子的等离子体辅助原子层沉积用于非晶In-Ga-Zn-O薄膜晶体管存储
机译:根据无定形IN-ZN-O薄膜晶体管的有源层厚度和退火温度的电气性能
机译:超柔性,不可见的薄膜晶体管,由非晶金属氧化物/聚合物沟道层混合物制成。