Tin oxide and indium oxide nanowire transport characteristics: influence of oxygen concentration during synthesis

摘要

This study has analyzed the effects of varying oxygen flow rates on the formation of SnO_2 and In_2O_3 nanowires using a vapor-liquid-solid technique and transistor characteristics. SnO_2 nanowires grow regardless of the change in the O_2 flow rate, whereas In_2O_3 nanowire formation occurs only for an O_2 ratio below 0.2% in argon and transitions to nanoflakes or thin film at higher oxygen fractions. The oxygen fraction in the input gas stream also affects the transistor characteristics when these nanowires are used for device fabrication, particularly the threshold voltage. In_2O_3 nanowires appear to be more sensitive to O_2 compared to SnO_2 nanowires in terms of growth and transistor characteristics.