机译:硼离子注入在AlGaN / GaN异质结构上的GaN MOSFET的场隔离
School of Electronic Science and Technology, Dalian University of Technology, Dalian, Liaoning 116024, People's Republic of China ,Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan;
School of Electronic Science and Technology, Dalian University of Technology, Dalian, Liaoning 116024, People's Republic of China ,Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan;
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan;
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan;
Center for microelectronic system, Kyushu Institute of Technology, Fukuoka 820-8502, Japan;
Research and Development Department, SAMCO Inc., Kyoto 612-8443, Japan;
Research and Development Department, SAMCO Inc., Kyoto 612-8443, Japan;
School of Electronic Science and Technology, Dalian University of Technology, Dalian, Liaoning 116024, People's Republic of China;
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan;
Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan;
GaN MOSFET; field isolation; ion implantation;
机译:基于P-GaN / AlGaN / GaN异质结构的P沟道GaN MOSFET阈值研究
机译:Si衬底上的AlGaN / GaN单异质结构和AlGaN / GaN / AlGaN双异质结构场效应晶体管的材料生长和器件表征
机译:AlGaN / GaN异质结构上GaN MOSFET的特性随沟道尺寸的变化而变化
机译:基于具有p-GaN缓冲层的AlGaN / GaN异质结构的Al
机译:高性能紫外线光电探测器和LED和光电探测器的单片集成在SI上生长的P-GAN / AlGaN / GaN异质结构上的LED和PhotoTopetector
机译:AlGaN / GaN异质结构场效应晶体管中的极化库仑场散射改善了线性度
机译:照明对GaN / AlGaN / GaN异质结构和异质结构场效应晶体管电特性的影响以及通过适当的表面钝化消除
机译:m面alGaN / GaN和alInN / GaN异质结构的外延生长适用于常驻型GaN基板上的常关模式高功率场效应晶体管