机译:He〜+注入的InGaN中的多声子共振拉曼散射
Institut Jaume Almera, Consell Superior d'Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., E-08028 Barcelona, Catalonia, Spain;
Institut Jaume Almera, Consell Superior d'Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., E-08028 Barcelona, Catalonia, Spain;
Dept de Fisica Aplicada Ⅲ (Electricidad y Electronica), Univ. Complutense de Madrid, E-28040 Madrid, Spain,CEI Campus Moncloa, UCM-UPM, E-28040 Madrid, Spain;
Dept de Fisica Aplicada Ⅲ (Electricidad y Electronica), Univ. Complutense de Madrid, E-28040 Madrid, Spain,CEI Campus Moncloa, UCM-UPM, E-28040 Madrid, Spain;
Department of Physics, University of Houston, 4800 Calhoun, Houston, TX 77004, USA;
Department of Physics, University of Houston, 4800 Calhoun, Houston, TX 77004, USA;
Institut Jaume Almera, Consell Superior d'Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., E-08028 Barcelona, Catalonia, Spain;
resonant Raman scattering; InGaN; He-implanted layers;
机译:InGaN合金中的共振拉曼散射
机译:应变和弛豫的InGaN / GaN多量子阱中的共振拉曼散射
机译:植入GaN的v,Cr和Co离子的共振拉曼散射研究
机译:Be和C注入GaN中的传出多声子共振拉曼散射
机译:酶促反应的动力学速率理论和三共振相干反斯托克斯拉曼散射显微光谱。
机译:基于经验拉曼共振拉曼散射数据的半导体单壁碳纳米管的手性(nm)分配
机译:从单共振单壁碳纳米管可调谐共振拉曼散射。