首页> 外文期刊>Semiconductor science and technology >From high-T_c superconductors to highly correlated Mott insulators-25 years of pulsed laser deposition of functional oxides in Leipzig
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From high-T_c superconductors to highly correlated Mott insulators-25 years of pulsed laser deposition of functional oxides in Leipzig

机译:从高T_c超导体到高度相关的Mott绝缘体-莱比锡25年脉冲激光沉积功能性氧化物的过程

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摘要

Pulsed laser deposition (PLD) in Leipzig started in 1989 with Bi_2Sr_2Ca_1Cu_2O_8 high-T_c superconducting thin films grown in a laser-ionization mass spectrometer. Here, we briefly review 25 years of development of advanced PLD processes in Leipzig and their application to high-T_c superconducting, wide-bandgap semiconducting and multiferroic thin films, nanostructures and composites. The first two decades were devoted to large-area and double-sided YBa_2Cu_3O_(7-δ) thin films and hetero- and homoepitaxial ZnO-based films and nanowires, respectively. Based on that, transparent, oxide-based electronic devices are processed with epitaxial n-ZnO:Mg, Ga_2O_3, In_2O_3, or TiO_2 films. Amorphous oxide films of p-ZnCo_2O_4 and p-NiO provide p-type counterparts in highly rectifying pn-junction devices and are an environmentally friendly alternative. Magnetoelectric multiferroic composites, and highly correlated iridate thin films are other current hot research topics. PLD appears as one of the most flexible growth techniques for functional oxides on research and demonstrator level.
机译:莱比锡的脉冲激光沉积(PLD)始于1989年,其中Bi_2Sr_2Ca_1Cu_2O_8高T_c超导薄膜在激光电离质谱仪中生长。在这里,我们简要回顾了莱比锡25年来先进PLD工艺的发展及其在高T_c超导,宽带隙半导体和多铁性薄膜,纳米结构和复合材料中的应用。前二十年分别致力于大面积和双面YBa_2Cu_3O_(7-δ)薄膜以及异质和同质外延ZnO基薄膜和纳米线。基于此,用外延n-ZnO:Mg,Ga_2O_3,In_2O_3或TiO_2薄膜处理透明的,基于氧化物的电子器件。 p-ZnCo_2O_4和p-NiO的非晶氧化物膜在高度整流的pn结器件中提供p型对应物,是环保的替代方案。磁电多铁复合材料和高度相关的铱酸盐薄膜是当前的其他热门研究主题。在研究和论证者水平上,PLD似乎是功能性氧化物最灵活的生长技术之一。

著录项

  • 来源
    《Semiconductor science and technology》 |2015年第2期|024003.1-024003.10|共10页
  • 作者单位

    Semiconductor Physics Group, Institut fuer Experimentelle Physik Ⅱ, Universitaet Leipzig, Linnestr. 5, D-04103 Leipzig, Germany;

    Semiconductor Physics Group, Institut fuer Experimentelle Physik Ⅱ, Universitaet Leipzig, Linnestr. 5, D-04103 Leipzig, Germany;

    Semiconductor Physics Group, Institut fuer Experimentelle Physik Ⅱ, Universitaet Leipzig, Linnestr. 5, D-04103 Leipzig, Germany;

    Semiconductor Physics Group, Institut fuer Experimentelle Physik Ⅱ, Universitaet Leipzig, Linnestr. 5, D-04103 Leipzig, Germany;

    Semiconductor Physics Group, Institut fuer Experimentelle Physik Ⅱ, Universitaet Leipzig, Linnestr. 5, D-04103 Leipzig, Germany;

    Semiconductor Physics Group, Institut fuer Experimentelle Physik Ⅱ, Universitaet Leipzig, Linnestr. 5, D-04103 Leipzig, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    pulsed laser deposition; functional oxide films; semiconducting oxide films; highly correlated oxide films; multiferroic composites; heterostructures; epitaxy;

    机译:脉冲激光沉积功能性氧化膜半导体氧化膜;高度相关的氧化膜;多铁性复合材料;异质结构外延;

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