机译:双场板对InAlN / AlN / GaN HEMT中漏极电流退化的影响
Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100864, Peoples R China;
Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100864, Peoples R China|Xian Univ Posts & Telecommun, Sch Elect Engn, Xian, Peoples R China;
Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100864, Peoples R China;
Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100864, Peoples R China;
Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100864, Peoples R China;
Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100864, Peoples R China;
Xian Univ Posts & Telecommun, Sch Elect Engn, Xian, Peoples R China;
Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100864, Peoples R China|Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing, Peoples R China;
Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100864, Peoples R China;
Beijing Huajin Chuangwei Technol Co Ltd, Beijing, Peoples R China;
Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100864, Peoples R China;
HEMT; field plates; InAlN; GaN; electrical properties;
机译:(GaN)/ InAlN / GaN和InAlN / AlN / GaN HEMT中的栅极滞后效应和漏极滞后效应
机译:具有1.9A / mm漏极电流密度和800mS / mm跨导的栅极凹陷增强型InAlN / AlN / GaN HEMT
机译:具有等离子体化学气相沉积SiN栅极电介质的InAlN / AlN / GaN场致MIS-HEMT
机译:具有嵌入式源极场板结构的AlN / GaN MIS-HEMT的可扩展漏极电流模型
机译:处理表面状态的传输拐点和电荷陷阱对AlGaN / GaN HFET漏极电流的影响。
机译:以AlN / GaN超晶格为阻挡层的MOCVD法生长GaN HEMT中的2-DEG特性
机译:在栅极应力下的W波段中的栅极电流降解/ ALN / GaN HEMT