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机译:嵌入层组成不同的变质InAs / InGaAs量子点结构中的深能级
Shenzhen Univ, Minist Educ & Guangdong Prov, Key Lab Optoelectron Devices & Syst, Coll Optoelect Engn, Shenzhen 518060, Peoples R China;
Taras Shevchenko Natl Univ Kyiv, Dept Phys, 64 Volodymyrska St, UA-01601 Kiev, Ukraine;
CNR, Inst Mat Elect & Magnetism, I-43124 Parma, Italy;
Taras Shevchenko Natl Univ Kyiv, Dept Phys, 64 Volodymyrska St, UA-01601 Kiev, Ukraine;
CNR, Inst Mat Elect & Magnetism, I-43124 Parma, Italy;
CNR, Inst Mat Elect & Magnetism, I-43124 Parma, Italy;
Shenzhen Univ, Minist Educ & Guangdong Prov, Key Lab Optoelectron Devices & Syst, Coll Optoelect Engn, Shenzhen 518060, Peoples R China;
Shenzhen Univ, Minist Educ & Guangdong Prov, Key Lab Optoelectron Devices & Syst, Coll Optoelect Engn, Shenzhen 518060, Peoples R China;
Shenzhen Univ, Minist Educ & Guangdong Prov, Key Lab Optoelectron Devices & Syst, Coll Optoelect Engn, Shenzhen 518060, Peoples R China;
nanostructure; quantum dot; InAs/InGaAs; defect; thermally stimulated conductivity; photoconductivity; photoluminescence;
机译:变质二维量子能系统的计算:在InAs / InGaAs变质量子点纳米结构中的润湿层状态中的应用
机译:变质二维量子能系统的计算:在InAs / InGaAs变质量子点纳米结构中的润湿层状态中的应用
机译:GaAs(001)/ InAs / InGaAs / GaAs自组装量子点结构中的深能级及其对量子点器件的影响
机译:变质Inas / Ingaas量子点结构:光电性能和深度水平
机译:InGaAs量子点和量子点激光器的交替分子束外延和表征。
机译:变质InAs / InGaAs和InAs / GaAs量子点结构的光电性能比较研究
机译:具有过滤层的Ingaas变质缓冲层上的电子带Inas量子点激光