The Influence of the multilayer ZnO-HfOx structure on the characteristics of a lightemitting device

摘要

A MOS structure device with a ZnO-HfOx layer was fabricated on a p-type silicon substrate. Current (i.e., conductive) paths formed after the breakdown of the dielectric layer under a voltage and thermal-induced emission of broadband light, including visible and near-IR wavelengths. To investigate the influence of the ZnO-HfOx layer on a device's light-emitting characteristics, we prepared devices with one, two and three layers of ZnO-HfOx thin film on a p-type silicon substrate. We then measured the light emission, the emission spectrum, the I-V curves and the microstructure. The results show that the range and peak wavelength of the emission spectra from devices with different numbers of ZnO-HfOx layers are the same. Under the condition of a fixed total thickness of HfOx, luminous intensity increases with increasing number of ZnO-HfOx layers. Multilayer ZnO-HfOx can cause the ZnO grains to diffuse more into the HfOx layer, which is beneficial for the formation of current paths and increases the luminous intensity.