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Characterization of thin titanium silicide films prepared by PASET and a conventional process

机译:通过PASET和常规方法制备的硅化钛薄膜的表征

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An advanced silicide process featuring pre-amorphization before Ti film deposition and sequential two-step annealing (PASET) has been used to prepare thin titanium silicide films. Pre-amorphization by As implantation produces TiSi_2 films with low and uniform sheet resistance. The TiSi_2 film properties have been compared with those of a film prepared by a conventional two-step annealing technique. Non-destructive and non-contacting characterization techniques such as spectroscopic ellipsometry, atomic force microscopy and thermal wave analysis have been employed along with traditional tools (XRD, four-point probe, TEM) to characterize the TiSi_2 films. Optical properties such as refractive indices (n, k) of the TiSi_2 films are presented.
机译:先进的硅化物工艺具有制备Ti膜之前的预非晶化和顺序两步退火(PASET)的特性,已用于制备硅化钛薄膜。通过As注入进行的预非晶化可产生具有低且均匀的薄层电阻的TiSi_2薄膜。已经将TiSi_2膜的性能与通过常规两步退火技术制备的膜的性能进行了比较。 TiSi_2薄膜的传统技术(XRD,四点探针,TEM)已被采用无损和非接触式表征技术,如椭圆偏振光谱法,原子力显微镜和热波分析法。呈现了诸如TiSi_2膜的折射率之类的光学性质。

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