机译:在AlN / GaN异质结构上的原位SIN层形成期间表面状态的演变
Russian Acad Sci Siberian Branch Rzhanov Inst Semicond Phys Dept Phys & Engn Semicond Struct Novosibirsk Russia|Novosibirsk State Univ Dept Phys Novosibirsk Russia;
Russian Acad Sci Siberian Branch Rzhanov Inst Semicond Phys Dept Phys & Engn Semicond Struct Novosibirsk Russia;
Russian Acad Sci Siberian Branch Rzhanov Inst Semicond Phys Dept Phys & Engn Semicond Struct Novosibirsk Russia;
Russian Acad Sci Siberian Branch Rzhanov Inst Semicond Phys Dept Phys & Engn Semicond Struct Novosibirsk Russia;
Russian Acad Sci Siberian Branch Rzhanov Inst Semicond Phys Dept Phys & Engn Semicond Struct Novosibirsk Russia;
Natl Res Univ Elect Technol MIET Moscow Russia;
surface states; AlN; GaN heterostructure; SiN-passivation; GaN-enhancement-mode high electron; mobility transistor (E-HEMT); current collapse;
机译:金属有机化学气相沉积原位生长SiN_x作为栅极电介质和AlN / GaN异质结构的表面钝化
机译:插入在两个AlN层之间的GaN厚度对晶格匹配的AlInN / AlN / GaN / AlN / GaN双通道异质结构的输运性能的影响
机译:金属有机化学气相沉积法表征AlN / GaN异质结构上生长的原位SiN_x薄膜
机译:Si(111)衬底上的高质量GaN层:AlN缓冲层的优化和SiN中间层的插入
机译:磁耦合钴/铜多层膜和自旋阀中表面演化的原位观察。
机译:表面钝化对超薄AlN / GaN异质结构场效应晶体管中AlN势垒应力和散射机理的影响
机译:插入在两个AlN层之间的GaN厚度对晶格匹配的AlInN / AlN / GaN / AlN / GaN双通道异质结构的输运性能的影响