机译:基于三层氧化铝栅极堆栈和ingazno通道的电荷捕获记忆
Shandong Univ Ctr Nanoelect Jinan 250100 Peoples R China|Shandong Univ Sch Microelect Jinan 250100 Peoples R China;
Shandong Univ Ctr Nanoelect Jinan 250100 Peoples R China|Shandong Univ Sch Microelect Jinan 250100 Peoples R China;
Shandong Univ Ctr Nanoelect Jinan 250100 Peoples R China|Shandong Univ Sch Microelect Jinan 250100 Peoples R China;
Shandong Univ Ctr Nanoelect Jinan 250100 Peoples R China|Shandong Univ Sch Microelect Jinan 250100 Peoples R China;
Shandong Univ Ctr Nanoelect Jinan 250100 Peoples R China|Shandong Univ Sch Microelect Jinan 250100 Peoples R China;
Shandong Univ Ctr Nanoelect Jinan 250100 Peoples R China|Shandong Univ Sch Microelect Jinan 250100 Peoples R China|Shandong Univ State Key Lab Crystal Mat Jinan 250100 Peoples R China;
Shandong Univ Ctr Nanoelect Jinan 250100 Peoples R China|Shandong Univ Sch Microelect Jinan 250100 Peoples R China;
Shandong Univ Ctr Nanoelect Jinan 250100 Peoples R China|Shandong Univ Sch Microelect Jinan 250100 Peoples R China|Shandong Univ State Key Lab Crystal Mat Jinan 250100 Peoples R China|Univ Manchester Sch Elect & Elect Engn Manchester M13 9PL Lancs England;
charge-trapping memory; Al2O3; InGaZnO; multi-level storage; atomic layer deposition;
机译:基于三层氧化铝栅极堆栈和ingazno通道的充电诱捕记忆
机译:通过采用原位掺杂多晶硅通道,将垂直堆叠的无结电荷陷阱闪存设备的编程干扰降至最低
机译:非易失性存储应用中Al
机译:具有SiGe掩埋沟道和堆叠电荷捕获层的电荷捕获闪存器件的改进的操作特性
机译:栅极堆叠和通道工程:金属栅极和锗通道器件的研究。
机译:非易失性存储应用中Al2O3-TiAlO-SiO2栅堆叠的电子结构和电荷俘获特性
机译:基于三层氧化铝栅极堆栈和ingazno通道的电荷捕获记忆