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Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel

机译：基于三层氧化铝栅极堆栈和ingazno通道的电荷捕获记忆

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Pengfei Ma; Jiacheng Gao; Wenhao Guo; Guanqun Zhang; Yiming Wang; Qian Xin; Yuxiang Li; Aimin Song;
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1. Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel [J] . Ma Pengfei, Gao Jiacheng, Guo Wenhao, Semiconductor science and technology . 2020,第5期

机译：基于三层氧化铝栅极堆栈和ingazno通道的电荷捕获记忆
2. Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel [J] . Ma Pengfei, Gao Jiacheng, Guo Wenhao, Trends in Ecology & Evolution . 2020,第5期

机译：基于三层氧化铝栅极堆栈和ingazno通道的充电诱捕记忆
3. Minimized program disturb for vertically stacked junctionless charge-trapping flash memory devices by adopting in-situ doped poly-silicon channel [J] . Fang Hsin-Kai, Chang-Liao Kuei-Shu, Chen Chun-Yuan, Microelectronic Engineering . 2015,第NOVa1期

机译：通过采用原位掺杂多晶硅通道，将垂直堆叠的无结电荷陷阱闪存设备的编程干扰降至最低
4. Improved operation characteristics for charge-trapping flash memory devices with SiGe buried channel and stacked charge-trapping layers [C] . 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology . 2010

机译：具有SiGe掩埋沟道和堆叠电荷捕获层的电荷捕获闪存器件的改进的操作特性
5. Gate stack and channel engineering: Study of metal gates and germanium channel devices. [D] . Todi, Ravi M. 2007

机译：栅极堆叠和通道工程：金属栅极和锗通道器件的研究。
6. Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications [O] . Wenchao Xu, Yang Zhang, Zhenjie Tang, 2017

机译：非易失性存储应用中Al2O3-TiAlO-SiO2栅堆叠的电子结构和电荷俘获特性
7. Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels [O] . Chen Shih-Ching 2012

机译：具有氧化物/氮化物/氧化物堆叠栅极电介质和纳米线通道的非易失性多晶硅薄膜晶体管存储器

Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel

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