Negative capacitance tunneling field effect transistors based on monolayer arsenene, antimonene, and bismuthene

摘要

Monolayer hexagonal arsenene, antimonene, and bismuthene are emerging two-dimensional (2D) semiconductors. We explore the possibility of their applications on 10 nm gate long tunneling field effect transistors (TFETs) from the ab initio quantum transport simulation. We predict that the ML bismuthene TFET has the largest on-state current Ion (1153 mu A mu m(-1)) among the three checked hexagonal group V-enes ones for high-performance (HP) application. We further propose a prototype negative capacitance TFET, where a ferroelectric dielectric is adopted in the TFET to improve the device performance. The resulting Ion is dramatically elevated to 1868 mu A mu m(-1), which has met the requirement of International Technology Roadmap for Semiconductors for HP devices (1450 mu A mu m(-1)). Therefore, the combination of 2D semiconductor channel and negative capacitance technique breaks the bottleneck of a very low on-state current of conventional TFETs.