Industry Divides on Low-K Dielectric Choices

摘要

At the 0.13 μm node, device manufacturers are split among those that will use an organic spin-on dielectric (SOD); those that will use silicate films, produced by PECVD or SOD; and those that will wait until future generations to use these new films, The ability to overcome extensive integration challenges and extend a material's performance will determine a company's long-term success at attaining a tow effective dielectric constant (k_(eff)). Together with copper interconnects, low-k dielectrics deliver faster device speed and reduced crosstalk in advanced devices.