Ion Implantation Goes Beyond Traditional Parameters

摘要

Ion implant technology has pro-gressed to meet the increasingly demanding requirements posed by continued shrinks. Although alternate technologies such as plasma ion immersion and laser doping are brought out as possible replace- of running out of steam. For years, implant was dominated by hardware design and practically considered a commodity product. Today, it is central to device performance changes. The rubber meets the road at the transistor shrink, and implant is a key part of it. OEMs are focusing on integration, cooperative processes with those involved in activation, and gate formation. Where implant once was an orphan fab process done by different groups, it is now being rapidly integrated into the main line of transistor formation (Fig. 1).