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3-D ICs Are Cost-Driven, Evolutionary

机译:3D IC由成本驱动,不断发展

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Despite the somewhat revolutionary nature of 3-D integration at the device level, the technology is really evolutionary according to the panelists on Semiconductor International's latest webcast, "Through-Silicon Vias: Ready for Prime Time?" Phil Garrou, IEEE Fellow and consultant with Microelectronic Consultants of North Carolina (Research Triangle Park, N.C.). mapped out the evolutionary way in which the three components of 3-D ICs, through-silicon vias (TSVs), wafer thinning and wafer bonding, are being implemented. "In image sensors for digital cameras, TSVs are used without chip stacking. In the next generation, the sensors will be stacked with DSPs. Sony is stacking memory on logic in the 90 nm PS3 chip. Infineon and IBM are implementing face-to-face bonding in their SOLID technology. Samsung and others are using TSVs in memory stacking, but the vias go through the existing bond pads, so chip redesign has yet to take place to fully optimize the 3-D implementation."
机译:尽管在半导体层面上3D集成具有某种革命性的性质,但根据国际半导体公司最新网络广播“直通硅通孔:准备黄金时间?”的与会者的说法,该技术确实是不断发展的。 IEEE研究员,北卡罗来纳州微电子顾问公司顾问(Phil Garrou)勾勒出实现3D IC的三个组件,硅通孔(TSV),晶圆变薄和晶圆键合的发展方式。 “在数码相机的图像传感器中,无需芯片堆叠即可使用TSV。在下一代产品中,传感器将与DSP堆叠在一起。索尼正在将存储器存储在逻辑上的90 nm PS3芯片中。英飞凌和IBM正在实现面对面的合作。三星和其他公司正在存储器堆叠中使用TSV,但是通孔会通过现有的焊盘,因此尚未进行芯片重新设计以完全优化3D实现。”

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