32 nm Marked by Litho, Transistor Changes

摘要

The transition from 5 to 32 nm is likely to involve some key material changes and a major change in lithography to double patterning for critical layers. Selections will be driven by costs and specific product needs. The 65 to 45 nm technology transition is characterized by several changes, including the first adoption of immersion ArF (193 nm) lithography by many companies, the adoption of high-k/metal gates by many logic manufacturers, and continued scaling of low-k in the interlevel dielectric (ILD) of multilevel stacks.