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Evolution Of Block Copolymer Lithography To Highly Ordered Square Arrays

机译:嵌段共聚物光刻技术向高阶方阵的演变

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摘要

The manufacture of smaller, faster, more efficient microelectronic components is a major scientific and technological challenge, driven in part by a constant need for smaller lithographically defined features and patterns. Traditional self-assembling approaches based on block copolymer lithography spontaneously yield nanometer-sized hexagonal structures, but these features are not consistent with the industry-standard rectilinear coordinate system. We present a modular and hierarchical self-assembly strategy, combining supramolecular assembly of hydrogen-bonding units with controlled phase separation of diblock copolymers, for the generation of nanoscale square patterns. These square arrays will enable simplified addressability and circuit interconnection in integrated circuit manufacturing and nanotechnology.
机译:更小,更快,更高效的微电子元件的制造是一项重大的科学技术挑战,部分原因是对更小的光刻定义的特征和图案的不断需求。传统的基于嵌段共聚物光刻的自组装方法可自发产生纳米尺寸的六边形结构,但这些特征与行业标准的直线坐标系不一致。我们提出了一种模块化和分层的自组装策略,将氢键单元的超分子组装与二嵌段共聚物的可控相分离相结合,以产生纳米级方形图案。这些正方形阵列将简化集成电路制造和纳米技术中的寻址能力和电路互连。

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