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Nanohot embossing using curved stage to replicate antireflection nanostructures onto light guide

机译:使用弯曲平台进行纳米热压花,以将抗反射纳米结构复制到光导上

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摘要

A nanohot embossing using a curved stage is proposed to improve the replication ratio of nanostructures at near the edge of a thick (sub-mm-order thickness) polymer substrate. The lower replication ratio at near the edge resulting from a conventional hot embossing is due to lower compressive stress, which is simulated by the finite-element method (FEM). The height of the proposed curved stage is gradually increased from the center to the edge to bring the levels of compressive stress at the center and at the edge closer. Here, we demonstrate replications of antireflection nanostructures, which have both pitch and height of 200 nm, onto the 0.75-mm-thick light guide for the light emitting diode (LED) frontlight systems used in mobile phones. It was found that a cutting depth of 14 μm on the curved stage is necessary to achieve a high uniformity of the replication ratio at near the edge. The replication ratio at near the edge is improved from 65% to 94%. The reflectance of the antireflection structures is 0.6%, which is a high enough quality for use in LED frontlight systems.
机译:提出了使用弯曲台的纳米热压花以提高在厚(亚毫米级厚度)聚合物衬底的边缘附近的纳米结构的复制率。传统的热压纹在边缘附近的复制率较低是由于压缩应力较低,这是通过有限元方法(FEM)进行模拟的。提议的弯曲平台的高度从中心到边缘逐渐增加,以使中心处和边缘处的压缩应力水平更加接近。在这里,我们演示了节距和高度均为200 nm的抗反射纳米结构在0.75毫米厚的光导上的复制,该光导用于移动电话中的发光二极管(LED)前灯系统。发现在弯曲台上的切割深度为14μm对于在边缘附近实现复制率的高均匀性是必要的。边缘附近的复制率从65%提高到94%。抗反射结构的反射率为0.6%,足以用于LED前灯系统。

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