Effect of Double Hole Injection Layer on an All-Solution-Processed Quantum Dot Light Emitting Diode Device

摘要

Hole injection was controlled using a double hole injection layer to improve the electro-optical properties in all solution-processed quantum dots light emitting diodes (QD-LEDs). Compared to the non-MoO3 QD-LED device, the MoO3-inserted double HIL QD-LED showed improved electroluminescence with a low operating voltage. The synthesis temperature of the quantum dots affected the full-width-at-half-maximum of the spectra. The thicknesses of the solution-processed hole transport and electron transport layers in the device were also optimized. The QD-LED with the ITO/PEDOT: PSS/MoO3/PVK/(CdSe/CdS/ZnS) QD/TiO2/Al structure exhibited a maximum luminescence of 6300 cd/m(2) at an operating voltage of 4.0 V, presenting deep red color coordinates of (0.670, 0.328).