RADIATION DAMAGE EFFECTS ON X-RAY SILICON DETECTORS

摘要

The paper describes some results concerning technology and behaviour of X-and gamma-ray N~+PP~+ silicon detectors used in physics research, industrial and medical radiography and non-destructive testing. These detectors work at the room-temperature and can be used individually to detect X-and soft gamma-rays, or coupled with scintillators for higher incoming energies. Electrical characteristics of these photodiodes, their modification after exposure to radiation and results of spectroscopic X-and gamma-ray measurements are discussed. Devices manufactured under this technology proved to be stable after an exposure in high intensity gamma field with the dose range of 10 Krad-5 Mrad. Nuclear radiation resistance was studied by irradiation with ~(60)Co gamma source (1.17 and 1.33 MeV) at dose rates of 59 Krad/hour and 570 Krad/hour. Results indicate that proposed structures enable the development of reliable silicon detectors to be used in a high gamma-radiation environments encountered in a lot of applications.