CHANGE IN THE RESISTANCE OF THE SEMICONDUCTOR IN THE VARIABLE DEFORMATION FIELD

摘要

In this work the influence of variable deformation on concentration of nonequilibrium carriers and resistance chances of the semiconductor have been investigated. The phase shift define by frequency of deformation and life time of nonequilibrium carriers, have been shown between variable deformation and semiconductor resistance change. It is established that, in a plane resistance-deformation the phase trajectory forms hysteresis loop. When conductivity varies only due to electronic processes then the hysteresis loop remains smooth. At the constant frequency and amplitude, the form of the fluctuation does not change. It is shown that, the structural changes in the sample leads the hysteresis loop movement in phase space.