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Semiconductor Processing Equipment

机译:半导体加工设备

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This research disclosure relates to a gas pressure curtain generation system that may form part of a dynamic gas lock (DGL) system, where the DGL system may form part of a radiation system. The radiation system may be part of a lithographic system. The lithographic system may include a lithographic apparatus. The lithographic apparatus may be, for example, an extreme ultraviolet (EUV) lithographic apparatus. Figure 1 shows a radiation system comprising a DGL. The radiation system comprises a droplet generator that is arranged to produce a stream of fuel droplets, which may be tin fuel droplets, along a fuel droplet trajectory and a laser system that is arranged to produce a laser beam that intersects the fuel droplet trajectory. The laser beam that is incident on the fuel droplets may at least partially convert the droplets into a plasma at a plasma region (also known as a primary focus). The plasma may subsequently emit EUV radiation. This type of radiation source is known as a laser-produced plasma (LPP) source.
机译:该研究公开涉及一种气体压力幕动系统,其可以形成动态气体锁(DGL)系统的一部分,其中DGL系统可以形成辐射系统的一部分。辐射系统可以是光刻系统的一部分。光刻系统可包括光刻设备。光刻设备可以是例如极端紫外(EUV)光刻设备。图1示出了包括DGL的辐射系统。辐射系统包括液滴发生器,该液滴发生器被布置成产生燃料液滴流,其可以是燃料液滴轨迹的锡燃料液滴,并且激光系统被布置成产生与燃料液滴轨迹相交的激光束。入射在燃料液滴上的激光束可以至少部分地将液滴转换成等离子体区域(也称为主要焦点)的等离子体。随后可以发出EUV辐射。这种类型的辐射源被称为激光产生的等离子体(LPP)源。

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    《Research Disclosure》 |2020年第674期|831-834|共4页
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