METHOD FOR CALIBRATING SIMULATION PROCESS BASED ON DEFECT-BASED PROCESS WINDOW

摘要

Described herein are methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associaced with manufacturing of a chip. A method describes calibraling a simulation process associated with a patterning process. The method includes obtaining: (ⅰ) characteristic limits of a characteristic of a printed pattern based on a threshold failure rate of the printed pattern, and (ⅱ) a reference process window based on the characteristic limits; and calibrating the simulation process such that a simulated process window is within an acceptable threshold of the reference process window. The calibrating involves executing, one or more proces、s models, to determine the simulated pattern; adjusting parameter values associated with the one or more process models until a characteristic of the simulated pattern satisfies the characteristic limits.