Methods for Characterizing Defect-Based Patterning Processes for Hotspot Reduction

摘要

Described herein are methods for optimizing an aspect of a patterning process based on defects. For example, a method of optimizing a source and mask of a patterning process may include: obtaining a location on a substrate having a critical probability of having a defect; defining a defect region around the location to include a portion of the pattern on the substrate and one or more evaluation points associated with the portion of the pattern; determining a value of the first cost function based on the defect metric associated with the defect; determining a first guide function for the first cost function, wherein the first guide function is associated with a performance metric of a patterning process at one or more evaluation locations within the defect area; and adjusting the source and/or mask characteristics based on the values of the first cost function and the first guide function.