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Semiconductor Processing Equipment

机译:半导体加工设备

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This research disclosure relates to a radiation source. In particular, it relates to a laser-produced plasma (LPP) radiation source. Such an LPP source may provide radiation to a lithographic apparatus. (Photo)lithography is a process of transferring a paltem to a radiation-sensitive substrate by exposing the substrate to radiation having the pattern. Radiation used in a lithographic apparatus may be extreme ultraviolet (EUV). EUV radiation has a wavelength in the range 4 - 20 nm, for example 13.5 nm. One known source of EUV radiation illuminates fuel droplets with laser radiation provided by a laser. This type of source is known as a laser-produced plasma (LPP) source. Typically, the laser radiation is pulsed. The radiation source is arranged such that the laser radiation is provided in a laser beam which is focussed. The fuel droplets are provided by a fuel droplet generator arranged to deliver fuel droplets such that they are illuminated by the laser radiation at an illumination point and thereby generate EUV radiation.
机译:该研究披露涉及一种辐射源。特别地,它涉及激光产生的等离子体(LPP)辐射源。这种LPP源可以向光刻设备提供辐射。 (照片)光刻是通过将衬底暴露于具有图案的辐射来将宫颈转移到辐射敏感衬底的过程。光刻设备中使用的辐射可以是极端的紫外(EUV)。 EUV辐射的波长在4-20nm的范围内,例如13.5nm。 EUV辐射的一个已知来源利用激光提供的激光辐射照射燃料液滴。这种类型的源被称为激光产生的等离子体(LPP)源。通常,激光辐射被脉冲。辐射源被布置成使得激光辐射设置在聚焦的激光束中。燃料液滴由燃料液滴发电机提供,该燃料液滴发生器布置成输送燃料液滴,使得它们被照射点处的激光辐射照射,从而产生EUV辐射。

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    《Research Disclosure》 |2020年第676期|1976-1978|共3页
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