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Training algorithm for scaling intra-field wafer alignment (IFWA) model parameters

机译:用于缩放现场晶片对齐(IFWA)模型参数的培训算法

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摘要

A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated, circuits (ICs). In lithographic processes, it is desirable frequently to make measurements of the structures created, e.g., for process control and verification. Driven by the growing demand of manufacturing modern integrated circuits with ever shrinking sizes, lithographic technologies that can offer higher resolution and better reliability are under a fast-paced and extensive development. One of such advancing lithographic technologies is the extreme ultra-violet lithography (also known as EUV or EUVL), which allows for sub-10 nanometer (nm) scale resolution. In parallel with the advancement of lithographic technologies, inspection and metrology technologies, such as for example optical scatterometry, are making efforts to keep up with the scaling pace of semiconductor ICs. As such, various inspection and metrology tools have been made available, including scanning electron microscopes (SEMs). which arc often used to measure critical dimension (CD), and specialized optical metrology tools, such as various forms of scatterometers, to measure overlay, a measure of the accuracy of alignment of two layers in a device.
机译:光刻设备是一种机器,该机器将所需图案施加到基板上,通常在基板的一部分上。例如,可以使用光刻设备,例如在集成电路(IC)的制造中。在光刻过程中,频繁地理想地进行测量,例如用于过程控制和验证。由于生产现代综合电路的需求不断增长,可以提供更高分辨率和更好可靠性的平版技术在快节奏和广泛的发展中。这种推进的平版技术之一是极端的紫外光刻(也称为EUV或EUV1),其允许亚10纳米(NM)刻度分辨率。与光刻技术的进步并行,检查和计量技术,例如光学散射测定法,正在努力跟上半导体IC的缩放速度。因此,已经提供了各种检查和计量工具,包括扫描电子显微镜(SEM)。通常用于测量关键尺寸(CD)和专用光学计量工具(例如各种形式的散射计)来测量覆盖物的电弧,以测量覆盖层的测量装置中的两层对准的准确性。

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    《Research Disclosure》 |2020年第676期|1432-1433|共2页
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