Feedback control of CMP process by using levelling and/or focus metrology data

摘要

The invention relates to a Chemical Mechanical Polishing / Planarization process that is an (increasingly) important step within a semiconductor wafer manufacturing process. The effect of the CMP process on the topography of a wafer of interest is measured in the lithographic apparatus (scanner) by the level sensor. It can also be measured using focus measurements on focus metrology dedicated structures based on for example seatterometry.