Calculations of light trapping, responsivity, and internal quantum efficiency of In-doped silicon (n) structure

摘要

This research intends to investigate a mathematical model for In-doped silicon (n) structure, and calculate the absorbance of the simulated cell, then study the effect of impurity photovol- taic effect on the responsivity and internal quantum efficiency using the Shockey-Read-Hall model, it is found that the internal flux inside the simulated Lambertian cell could be enhanced as much as 25 times as a result of light trapping. Maximum responsivity and internal quantum efficiency of the simulated cell was obtained at a wavelength around 1 μm and 10~17 cm~-3 indium concentration.