Terahertz Self-Induced Oscillations in the Injection p-n Junction with Fixed Reverse Bias

摘要

The results of numerical solutions of the complete equations of the diffusion-drift model (DDM) of Ge, Si and GaAs reverse-biased abrupt p-n junctions with injection of the constant-intensity electron flow into the p region have been presented. The excitation mechanism of p-n junctions was examined and the factors affecting the frequency and amplitude of self-induced oscillations were established. The spectra of power and electron efficiency have been also presented. Abrupt Ge, Si and GaAs p-n junctions were shown to generate oscillations over the entire microwave range, while the second harmonic frequency could reach the terahertz (THz) range.