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MONTE CARLO STUDY OF MOSFET DOSEMETER CHARACTERISTICS: DOSE DEPENDENCE ON PHOTON ENERGY, DIRECTION AND DOSEMETER COMPOSITION

机译:MOSFET剂量学特性的蒙特卡罗研究:光子能量,方向和剂量学组成的剂量依赖性

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摘要

MOSFET dosemeters are emerging as a versatile tool in various medical physics and health physics dose measurements. It is an important but difficult task to understand their energy and directional dependences because of their unique features. This paper presents a study to characterise a MOSFET dosemeter using Monte Carlo simulation method. Monoenergetic photon beams ranging from 15 to 6 MeV were simulated to study the energy and angular dependences. The results were compared with published experimental data. The Monte Carlo model also provided insightful information on optimising the dosemeter design by examining how various regions of the dosemeter contributed to the dose. Detailed energy deposition processes were further analysed by tracking individual particles inside the dosemeter.
机译:MOSFET剂量计正在成为各种医学物理学和健康物理学剂量测量的通用工具。由于其独特的功能,了解它们的能量和方向依赖性是一项重要但艰巨的任务。本文提出了使用蒙特卡罗模拟方法表征MOSFET剂量计的研究。模拟了15至6 MeV的单能光子束,以研究能量和角度依赖性。将结果与公开的实验数据进行比较。蒙特卡洛模型还通过检查剂量计的各个区域对剂量的贡献,为优化剂量计设计提供了有见地的信息。通过跟踪剂量计内的单个颗粒,进一步分析了详细的能量沉积过程。

著录项

  • 来源
    《Radiation Protection Dosimetry》 |2005年第1期|p.40-46|共7页
  • 作者单位

    Nuclear Engineering and Engineering Physics Program, Rensselaer Polytechnic Institute, Troy, NY 12180, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 TL72;
  • 关键词

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