Semiconductor laser with longitudinal electron-beam pump and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy

摘要

The method of molecular beam epitaxy on a ZnSe substrate was used to grow a ZnCdSe/ZnSe structure with 115 quantum wells. This structure was made up into a cavity which included part of the sub- strate. Lasing was excited by longitudinal pumping with a scanning electron of Ee=40-70keV energy. At T=80K for Ee=65KeV the threshold current density was 60A/cm~2 and the output power was 0.15 W at the 465nm wavelength. At T=300K the lasing occurred in the ZnSe substrate.