Unified presentation of 1/f noise in electron devices: fundamental 1/f noise sources

摘要

1/f noise in semiconductors, semiconductor devices, and collision-free devices (like vacuum tubes) is presented from a unified point of view, using an extended version of the F.N. Hooge equation (Physica, vol. 83b, p.9, 1976), which is generalized to all collision-dominated systems involving mobility, diffusion, and cross-section fluctuations. It also applies to collision-free processes involving vacuum tubes, Schottky barrier diodes operating in the thermionic mode, and in devices such as p-i-n diodes in which collision processes are not the determining factor. A generalized schematic is given for expressing the noise spectrum S/sub 1/(f) in the external circuit in terms of distributed noise sources of the nonuniform devices in terms of alpha /sub H/, so the latter can be determined from the former. It is then found that the Hooge parameter. alpha /sub H/ introduced by this equation can be used as a general measure of the noisiness of a system or device. Several cases in which the noise does not obey the quantum 1/f noise theory are discussed. Measurements on many different devices are examined, and an attempt is made to correlate measured values of the Hooge parameter with the values calculated from P.H. Handel's quantum theory of 1/f noise (1975, 1980).