GaAs Schottky diodes for THz mixing applications

摘要

The operation of GaAs Schottky barrier diodes, the critical mixer element used in heterodyne receivers for a variety of scientific applications in the terahertz frequency range, is reviewed. The constraints that the receiver system places on the diodes are considered, and the fundamental guidelines for device optimization are presented. The status of ongoing research, both experimental and theoretical, is examined. Emphasis is placed on investigations of the various effects that can limit diode performance at these high frequencies. Investigations of planar diode technology are summarized, and the potential replacement of whisker-contacted devices with planar structures is considered.