机译:硅和锗纳米线中与直径有关的掺杂剂位置
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138;
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138;
National Center for Nanoscience and Technology, Beijing 100190, China;
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138;
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138 School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138;
nanoelectronics; surface doping; surface segregation; vapor-liquid-solid growth;
机译:硅,硅锗(Si_(0.7)Ge_(0.3))和应变硅锗(Si_(0.8)Ge_(0.2)/ Si_(0.5)Ge_(0.5))纳米线中自旋弛豫的直径依赖性
机译:硅 - 锗和锗 - 硅芯壳纳米线的结构性能
机译:关于绝缘子上锗化硅(SGOI)中n和p型掺杂剂的活化以及掺杂剂行为与退火条件的关系的研究
机译:直径依赖性退火对硅纳米线MOSFET中S / D扩展随机掺杂物波动的影响
机译:金铜合金催化剂组成对硅和锗纳米线中晶体生长和掺杂剂分布的影响。
机译:硅和锗纳米线中与直径有关的掺杂剂位置
机译:硅和锗纳米线中与直径有关的掺杂剂位置
机译:硅和锗纳米线的合成。