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Pressure-induced superconductivity in topological parent compound Bi_2Te_3

机译:拓扑母体化合物Bi_2Te_3的压力诱导超导

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摘要

We report a successful observation of pressure-induced superconductivity in a topological compound Bi_2Te_3 with Tc of ~3 K between 3 to 6 GPa. The combined high-pressure structure investigations with synchrotron radiation indicated that the superconductivity occurred at the ambient phase without crystal structure phase transition. The Hall effects measurements indicated the hole-type carrier in the pressure-induced superconducting Bi_2Te_3 single crystal. Consequently, the first-principles calculations based on the structural data obtained by the Rietveld refinement of X-ray diffraction patterns at high pressure showed that the electronic structure under pressure remained topologically nontrivial. The results suggested that topological superconductivity can be realized in Bi_2Te_3 due to the proximity effect between superconducting bulk states and Dirac-type surface states. We also discuss the possibility that the bulk state could be a topological superconductor.
机译:我们报告了在拓扑化合物Bi_2Te_3中的压力诱导的超导性的成功观察,其Tc在3至6 GPa之间为〜3K。高压结构研究与同步加速器辐射的组合表明,超导发生在环境相而没有晶体结构相变。霍尔效应测量表明压力诱导的超导Bi_2Te_3单晶中的空穴型载流子。因此,基于通过高压下的X射线衍射图的Rietveld精修获得的结构数据的第一性原理计算表明,在压力下的电子结构在拓扑上仍然是平凡的。结果表明,由于Bi_2Te_3的超导本体态与狄拉克型表面态之间的邻近效应,可以实现拓扑超导。我们还讨论了体态可能是拓扑超导体的可能性。

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  • 作者单位

    Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China,Department of Physics, University of Science and Technology of China, Hefei 230026, China;

    Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Department of Physics, University of Science and Technology of China, Hefei 230026, China;

    Hpsync, Geophysical Laboratory, Carnegie Institution of Washington,Advanced Photon Source, Argonne, IL 60439;

    Hpsync, Geophysical Laboratory, Carnegie Institution of Washington,Advanced Photon Source, Argonne, IL 60439;

    Natural Science Research Center, Harbin Institute of Technology, Harbin 150080, China;

    State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;

    Department of Physics, McCullough Building, Stanford University, Stanford, CA 94305-4045,Center for Advanced Study, Tsinghua University, Beijing 100084, China;

    Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    high-pressure effects; pressure-tuned conductivity; topological superconductors;

    机译:高压效应;调压电导率;拓扑超导体;
  • 入库时间 2022-08-18 00:40:38

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